TH58NVG4S0FTA20

Serial 3.3V 16Gbit
3,958 有效庫存

TH58NVG4S0FTA20

有效庫存3,958

Serial 3.3V 16Gbit

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TH58NVG4S0FTA20 數據表
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目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

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TH58NVG4S0FTA20 詳細說明

Behold the TH58NVG4S0FTA20 - a revolutionary 3D NAND flash memory chip developed by Toshiba Memory Corporation. Boasting a capacious 256 gigabits and constructed with a 64-layer BiCS4 architecture, this chip offers unparalleled storage density in a compact package. Tailored for solid-state drives and other storage solutions, it delivers lightning-fast read and write speeds, exceptional energy efficiency, and unwavering reliability. Utilizing a Toggle 2.0 interface, it achieves a striking maximum data transfer rate of 533 Mbps per lane, reshaping the landscape of storage technology

主要特徵

  • 256Gb capacity
  • 3.3V power supply
  • Toggle DDR 2.0 interface
  • 20nm MLC NAND Flash
  • Industrial temperature range: -40°C to +85°C
  • Advanced wear leveling algorithm

應用

  • Automotive applications
  • Industrial applications
  • Consumer electronics
  • Medical devices
  • Sensors and instrumentation
  • Communication systems
  • Computer peripherals
  • Security systems
  • Networking equipment
  • Robotics
Kioxia America, Inc. Inventory

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category ! NAND Flash RoHS Details
Mounting Style SMD/SMT Package / Case TSOP-48
Memory Size ! 16 Gbit Interface Type Parallel
Organization 2 G x 8 Timing Type Synchronous
Data Bus Width 8 bit Supply Voltage - Min 2.7 V
Supply Voltage - Max 3.6 V Supply Current - Max 30 mA
Minimum Operating Temperature 0 C Maximum Operating Temperature ! + 70 C
Active Read Current - Max 30 mA Brand Kioxia America
Memory Type ! NAND Moisture Sensitive Yes
Product NAND Flash Product Type ! NAND Flash
Speed 25 ns Factory Pack Quantity 96
Subcategory Memory & Data Storage

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 TH58NVG4S0FTA20 PDF 下載

常見問題解答

What is TH58NVG4S0FTA20?

The TH58NVG4S0FTA20 is a NAND Flash memory chip manufactured by Toshiba Memory Corporation. It is commonly used in a wide range of electronic devices such as smartphones, digital cameras, and solid-state drives (SSDs) to store data and program codes.

How Does TH58NVG4S0FTA20 Work?

The TH58NVG4S0FTA20 works by storing data in a non-volatile manner, meaning the data is retained even when the power is turned off. It operates using NAND flash memory technology, which utilizes a grid of memory cells to store data as electrical charges. The chip can be accessed and programmed through a specific interface protocol, allowing users to read, write, and erase data as needed.

How Many Pins does TH58NVG4S0FTA20 have and What are the Functions of the Pinout Configuration?

The TH58NVG4S0FTA20 is typically housed in a 63-ball BGA (Ball Grid Array) package. The pinout configuration includes:

  • VCC: Power supply pin.
  • GND: Ground pin.
  • IO[0:7]: I/O data pins for command, address, and data transfer.
  • WP#/ACC: Write Protect/Access Enable pin for hardware protection.
  • WE#/CLE: Write Enable/Command Latch Enable pin for program and erase operations.
  • RE#/ALE: Read Enable/Address Latch Enable pin for read operations and address input.
  • RP#/R/B: Ready/Busy pin for status indication.
  • CE#/NRE: Chip Enable/Not Ready/Disable pin for device selection and power control.
  • R/B#/F/R: Ready/Busy/Reclaim pin for program and erase operations status.

What are the Pros and Cons of TH58NVG4S0FTA20?

Pros:

  • High Storage Capacity: Offers a large amount of non-volatile storage space for data and code storage.
  • Fast Access Speed: Provides high-speed data transfer and access times, suitable for performance-critical applications.
  • Durable and Reliable: NAND flash memory technology allows for a rugged and reliable data storage solution.
  • Compact Form Factor: The 63-ball BGA package is space-efficient, suitable for small form factor devices.
  • Cost-Effective: Offers a cost-effective solution for mass storage in consumer electronics and industrial applications.

Cons:

  • Endurance Limit: NAND flash memory has a limited number of program/erase cycles, which may affect product lifespan in certain applications.
  • Complex Interface: Requires specific interface protocols and control signals for effective operation, which may increase system complexity.
  • Read Disturbance: Sensitive to read disturb issues that can affect adjacent memory cells during high read activity.

Are There Any Equivalents/Alternatives to TH58NVG4S0FTA20 for Recommendation?

Alternatives to the TH58NVG4S0FTA20 include NAND Flash memory chips from other manufacturers such as Micron, Samsung, and SK Hynix. Specific equivalents may include the Micron MT29F2G08ABAEAWP and Samsung K9K8G08U0A.

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     TH58TAG7S2FBA89

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