TBP18S030N
32X8 OTPROM, 40ns, PDIP16, PLASTIC, DIP-16
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製造商零件號 # : TBP18S030N
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包裝/封裝: DIP-16
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製造商: Texas Instruments
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產品分類 : Microcontrollers
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TBP18S030N 數據表
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TBP18S030N 詳細說明
These monolithic TTL programmable read- only memories (PROMs) feature titanium-tungsten (Ti-W) fuse links with each link designed to program in 20 microseconds. The Schottky-clamped versions of these PROMs offer considerable flexibility for upgrading existing designs or improving new designs as they feature full Schottky clamping for improved performance, low-current MOS- compatible p n-p inputs, choice of bus-driving three-state or open-collector outputs, and improved chip-select access times.Data can be electronically programmed, as desired, at any bit location in accordance with the programming procedure specified. AlI PROMs are supplied with a low-logic level output condition stored at each bit location. The programming procedure open-circuits Ti-W metal links, which reverses the stored logic level at selected locations. The procedure is irreversible; once altered, the output for that bit location is permanently programmed. Outputs that have never been altered may later be programmed to supply the opposite output level. Operation of the unit within the recommended operating conditions will not alter the memory content.A low level at the chip-select input(s) enables each PROM. The opposite level at any chip-select input causes the outputs to be off.The three-state output offers the convenience of an open-collector with the speed of a totem-pole output; it can be bus-connected to other similar outputs yet it retains the fast rise time characteristic of the TTL totem-pole output. The open-collector output offers the capability of direct interface with a data line having a passive pull up. A MJ suffix designates full-temperature circuits (formerly 54 Family) and are characterized for operation over the full military temperature range of -55°C to 125°C. A J or N suffix designates commercial-temperature circuits (formerly 74 Family) and are characterized for operation from 0°C to 70°C. Features● Low Supply Current: <5μA (typ) at 3V Over Temperature● Precision Factory-Set VCC Monitoring Threshold for 1.8V, 2.5V, 3.3V, and 5V Supplies● Fixed/Pin-Programmable or Resistor-Adjustable Pushbutton Setup Delay● Up to 2 Reset Outputs and 2 Debounced Pushbutton Inputs● Guaranteed RESET Valid for VCC Down to 0.95V● Active-Low RESET Output (Push-Pull or Open-Drain)● Immune to Short Power-Supply Transients● 0.86mm x 1.27mm 6-Bump WLP Package● -40°C to +125°C Operating Temperature Range Applications● Smartphones● Tablet PCs● eBook Readers● Portable/Battery-Powered Equipment● Glucose Monitors/Patient Monitors● Portable Instrumentation
主要特徵
- Low Supply Current: <5μA (typ) at 3V Over Temperature Precision Factory-Set VCC Monitoring Threshold for 1.8V, 2.5V, 3.3V, and 5V Supplies Fixed/Pin-Programmable or Resistor-Adjustable Pushbutton Setup Delay Up to 2 Reset Outputs and 2 Debounced Pushbutton Inputs Guaranteed RESET Valid for VCC Down to 0.95V Active-Low RESET Output (Push-Pull or Open-Drain) Immune to Short Power-Supply Transients 0.86mm x 1.27mm 6-Bump WLP Package -40°C to +125°C Operating Temperature Range
規格
以下是所選零件的基本參數,涉及零件的特性及其所屬類別。
Rohs Code | No | Part Life Cycle Code | Obsolete |
Part Package Code | DIP | Pin Count ! | 16 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
HTS Code ! | 8542.32.00.71 | Access Time-Max | 40 ns |
JESD-30 Code | R-PDIP-T16 | Length | 19.305 mm |
Memory Density | 256 bit | Memory IC Type | OTP ROM |
Memory Width | 8 | Number of Functions | 1 |
Number of Terminals | 16 | Number of Words | 32 words |
Number of Words Code | 32 | Operating Mode ! | ASYNCHRONOUS |
Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
Organization | 32X8 | Package Body Material | PLASTIC/EPOXY |
Package Code | DIP | Package Equivalence Code | DIP16,.3 |
Package Shape | RECTANGULAR | Package Style | IN-LINE |
Parallel/Serial | PARALLEL | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Power Supplies ! | 5 V | Qualification Status ! | Not Qualified |
Seated Height-Max | 5.08 mm | Supply Current-Max | 0.11 mA |
Supply Voltage-Max (Vsup) | 5.25 V | Supply Voltage-Min (Vsup) | 4.75 V |
Supply Voltage-Nom (Vsup) | 5 V | Surface Mount ! | NO |
Technology | CMOS | Temperature Grade ! | COMMERCIAL |
Terminal Form ! | THROUGH-HOLE | Terminal Pitch ! | 2.54 mm |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Width | 7.62 mm |
數據表 PDF
數據表記錄了器件的特性、絕對最大額定值、應用等,這對於作為器件特定應用的整體指南大有裨益。
常見問題解答
What is TBP18S030N?
The TBP18S030N is a 30V, 1.8A N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Infineon Technologies. It is suitable for high-efficiency power management applications, such as voltage regulation, motor control, and power switching in various electronic systems.
How Does TBP18S030N Work?
The TBP18S030N operates as a switch to control the flow of current in a circuit. It can be used to turn power to a load on or off and to control the speed of a motor. The MOSFET's low on-resistance and high current handling capability make it ideal for power management and switching applications.
How Many Pins does TBP18S030N have and What are the Functions of the Pinout Configuration?
The TBP18S030N is housed in a TO-263-3 package. The pinout configuration includes:
- GATE: Gate control pin for turning the MOSFET on and off.
- DRAIN: Connection for the load, where the current flows out of the MOSFET.
- SOURCE: Connection for the return path of the current back to the MOSFET.
- Tab: Exposed tab for heat dissipation and electrical connection.
What are the Pros and Cons of TBP18S030N?
Pros:
- High Current Handling: Capable of handling high continuous current for power applications.
- Low On-Resistance: Minimizes power loss and heat generation during operation.
- Fast Switching Speed: Enables efficient power management and control.
- Robust and Reliable: Suitable for various industrial and automotive applications.
Cons:
- Gate Drive Voltage: Requires consideration for proper gate voltage levels for reliable operation.
- Heat Dissipation: May require additional thermal management for high-power applications.
Are There Any Equivalents/Alternatives to TBP18S030N for Recommendation?
- The IRF3708 from Infineon Technologies is a similar N-channel MOSFET with comparable specifications.
- Alternatives to the TBP18S030N include the FDPF33N25T from Fairchild Semiconductor and the AUIRF9530 from Vishay Siliconix.
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