S29GL01GP12TFI010

Name: S29GL01GP12TFI010
Brand: Cypress Semiconductor Corp
Rating: 4.5 (10 reviews)
Author: Lisleapex

High-speed 1Gx1 flash memory chip rated at 120ns, with a PDSO56 package and TSOP-56 layout

4,004 有效庫存

S29GL01GP12TFI010

有效庫存4,004

High-speed 1Gx1 flash memory chip rated at 120ns, with a PDSO56 package and TSOP-56 layout

製造商零件號 # : S29GL01GP12TFI010
包裝/封裝: TSOP-56
製造商: Cypress/Spansion
產品分類 : Memory
系列 : S29GL01

品質保證

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例子

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S29GL01GP12TFI010 數據表

目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

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S29GL01GP12TFI010 詳細說明

Unleash the power of the S29GL01GP12TFI010, a cutting-edge flash memory chip engineered by Cypress Semiconductor for unparalleled data storage performance. With a massive 1 gigabit capacity organized as 128M x 8 bits, this chip offers a generous storage solution for applications requiring high-speed data access. Operating at a supply voltage range of 2.7V to 3.6V, it is compatible with both 3V and 5V systems, providing flexibility in integration across various platforms. Its fast page mode facilitates efficient data transfers, while the maximum clock frequency of 66 MHz ensures speedy read and write operations, making it ideal for demanding applications. Moreover, the S29GL01GP12TFI010's uniform block architecture simplifies sector erasures and program operations, enhancing overall performance and ease of use. Whether in telecommunications, networking, automotive, or industrial systems, this flash memory chip sets the standard for reliable non-volatile storage solutions

主要特徵

Faster data processing speeds
Advanced thermal monitoring
Enhanced error correction
Multiple I/O interfaces supported

應用

Optimized for efficiency
Designed for high performance
Ideal for complex systems

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	NOR Flash	RoHS	Details
Mounting Style	SMD/SMT	Package / Case	TSOP-56
Series	S29GL-P	Memory Size !	1 Gbit
Supply Voltage - Min	2.7 V	Supply Voltage - Max	3.6 V
Active Read Current - Max	110 mA	Interface Type	Parallel
Organization	128 M x 8	Data Bus Width	8 bit
Timing Type	Asynchronous	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature !	+ 85 C	Architecture	Sector
Brand	Infineon Technologies	Memory Type !	NOR
Moisture Sensitive	Yes	Product Type !	NOR Flash
Speed	120 ns	Factory Pack Quantity	91
Subcategory	Memory & Data Storage	Tradename	MirrorBit
Unit Weight	0.081130 oz

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 S29GL01GP12TFI010 PDF 下載

常見問題解答

What is S29GL01GP12TFI010?

The S29GL01GP12TFI010 is a 1 Gbit (128 Mbyte) single voltage Flash memory device manufactured by Cypress Semiconductor. It is designed for applications requiring high-density non-volatile storage, such as embedded systems, automotive electronics, and consumer devices.

How Does S29GL01GP12TFI010 Work?

The S29GL01GP12TFI010 operates by storing digital data persistently using NAND flash memory technology. It supports fast programming and erasing operations with reliable data retention, making it suitable for applications requiring frequent read/write cycles and long-term data storage.

How Many Pins does S29GL01GP12TFI010 have and What are the Functions of the Pinout Configuration?

The S29GL01GP12TFI010 is housed in a 48-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:

VCC: Power supply pin.
GND: Ground pin.
Address Inputs (A0-A21): Input pins for address lines.
Data Inputs/Outputs (DQ0-DQ15): Bidirectional data pins.
Control Inputs (CE#, OE#, WE#): Chip enable, output enable, and write enable control pins.
Reset (RESET#): Reset pin for initialization.
Ready/Busy (RY/BY#): Ready/busy output status pin.

What are the Pros and Cons of S29GL01GP12TFI010?

Pros:

High Capacity: Offers 1 Gbit of storage capacity.
Fast Access Time: Provides quick access to data stored in the memory array.
Reliability: Ensures reliable data storage with high endurance and data retention characteristics.
Compatibility: Compatible with standard flash memory interfaces and protocols.
Wide Application Range: Suitable for various industrial and consumer electronics applications.

Cons:

Complexity: Requires careful handling of programming and erasing operations to maintain data integrity.
Power Consumption: High-density flash memory devices may consume more power compared to lower-density alternatives.
Cost: Higher capacity flash memory devices like the S29GL01GP12TFI010 may have higher costs.

Are There Any Equivalents/Alternatives to S29GL01GP12TFI010 for Recommendation?

The MT29F1G08ABADAWP from Micron Technology offers similar 1 Gbit NAND flash memory capacity.
Alternatives to the S29GL01GP12TFI010 include the W25N01GV from Winbond and the IS37SML01G2 from ISSI.