PC28F00AP33TFA

Name: PC28F00AP33TFA
Brand: Micron
Rating: 4.5 (10 reviews)
Author: Lisleapex

This PBGA64 package measures 8 by 10 millimeters in size and has a low profile height of 1

5,902 有效庫存

PC28F00AP33TFA

有效庫存5,902

This PBGA64 package measures 8 by 10 millimeters in size and has a low profile height of 1

製造商零件號 # : PC28F00AP33TFA
包裝/封裝: BGA-64
製造商: Micron
產品分類 : Memory

品質保證

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認證

我們已成功獲得各項認證標準，並建立了自己的專業檢測實驗室。這確保了我們向客戶提供的每件產品都符合最高的品質標準。我們遵守嚴格的測試協議，以保持我們產品的一致性和準確性。為了確保我們的產品是原裝正品，我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。

運輸與付款

關於運送

我們通常會在幾個工作日內通過可靠的運輸公司（例如 FedEx、SF、UPS 或 DHL）運送訂單。我們還支持其他運輸方式。如果您想詢問具體的運輸細節或費用，請隨時與我們聯繫。

關於付款

我們接受多種支付方式，包括VISA、MasterCard、銀聯、西聯、PayPal等渠道。

如果您有特定的付款方式或想詢問費率和其他詳細信息，請隨時與我們聯繫。

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服務與包裝

About After Sales Service

All Parts Extended Quality Guarantee

自發貨之日起 90 天內發起申請。

與我們的工作人員確認退貨或換貨。

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關於包裝

在包裝方面，我們的產品均精心包裝在防靜電袋中，以提供ESD防靜電保護。外包裝堅固耐用且閉合牢固。我們支持各種包裝方法，例如捲帶式、切帶式、管式或託盤式。

例子

捲帶式

剪膠帶

管或託盤

PC28F00AP33TFA 數據表

目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

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快速報價

請提交詢價 PC28F00AP33TFA 或發送電子郵件給我們： Email: [email protected], 我們將在 12 小時內與您聯繫。

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PC28F00AP33TFA 詳細說明

General Description Micron's 65nm device is the latest generation of StrataFlash® wireless memory featuring flexible, multiple-partition, dual-operation architecture. The device provides high performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell (MLC) technology.Features • High-Performance Read, Program and Erase – 96 ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output – 8-, 16-, and continuous-word synchronous-burst Reads – Programmable WAIT configuration – Customer-configurable output driver impedance – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm – Block Erase: 0.9 s per block (typ) – 20 μs (typ) program/erase suspend • Architecture – 16-bit wide data bus – Multi-Level Cell Technology – Symmetrically-Blocked Array Architecture – 256-Kbyte Erase Blocks – 1-Gbit device: Eight 128-Mbit partitions – 512-Mbit device: Eight 64-Mbit partitions – 256-Mbit device: Eight 32-Mbit partitions – 128-Mbit device: Eight 16-Mbit partitions – Read-While-Program and Read-While-Erase – Status Register for partition/device status – Blank Check feature • Quality and Reliability – Expanded temperature: –30 °C to +85 °C – Minimum 100,000 erase cycles per block – 65nm Process Technology • Power – Core voltage: 1.7 V - 2.0 V – I/O voltage: 1.7 V - 2.0 V – Standby current: 60 μA (typ) for 512-Mbit, 65 nm – Deep Power-Down mode: 2 μA (typ) – Automatic Power Savings mode – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz • Software – Micron® Flash data integrator (FDI) optimized – Basic command set (BCS) and extended command set (ECS) compatible – Common Flash interface (CFI) capable • Security – One-time programmable (OTP) space 64 unique factory device identifier bits 2112 user-programmable OTP bits – Absolute write protection: VPP = GND – Power-transition erase/program lockout – Individual zero latency block locking – Individual block lock-down • Density and packaging – 128Mb, 256Mb, 512Mbit, and 1-Gbit – Address-data multiplexed and non-multiplexed interfaces – 64-Ball Easy BGA

主要特徵

Suitable for high-performance and reliability requirements
Faster access time for improved data transfer efficiency
Industrial temperature range for flexible usage

應用

Highly versatile memory product
Perfect for embedded applications
Reliable data storage solution

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	NOR Flash	Mounting Style	SMD/SMT
Package / Case	BGA-64	Series	P33
Memory Size !	1 Gbit	Supply Voltage - Min	2.3 V
Supply Voltage - Max	3.6 V	Active Read Current - Max	24 mA
Interface Type	Parallel	Maximum Clock Frequency	52 MHz
Organization	64 M x 16	Data Bus Width	16 bit
Timing Type	Asynchronous, Synchronous	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature !	+ 85 C	Brand	Micron
Memory Type !	NOR	Product Type !	NOR Flash
Standard	Common Flash Interface (CFI)	Factory Pack Quantity	1800
Subcategory	Memory & Data Storage	Type	Boot Block

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 PC28F00AP33TFA PDF 下載

常見問題解答

What is PC28F00AP33TFA?

The PC28F00AP33TFA is a 3V, 128 Mb, single level cell (SLC) parallel NOR flash memory device designed by Intel. It is suitable for a wide range of embedded applications requiring reliable, high-speed non-volatile storage, such as industrial control, automotive, and networking systems.

How Does PC28F00AP33TFA Work?

The PC28F00AP33TFA works by storing data in a non-volatile manner using NOR flash memory technology. It allows random access to any memory location, making it suitable for code storage and data storage in embedded systems. The device features high-speed read and program operations, enabling efficient data access for various applications.

How Many Pins does PC28F00AP33TFA have and What are the Functions of the Pinout Configuration?

The PC28F00AP33TFA is housed in a 48-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:

A0-A20: Address pins for memory access.
DQ0-DQ15: Data input/output pins for the parallel interface.
CE, CE1, CE2: Chip enable pins for memory activation.
WE, OE: Write enable and output enable control pins.
RP, RY/BY: Ready/busy or command sequence pins.
VCC, VCCQ, VSS: Power supply and ground pins.

What are the Pros and Cons of PC28F00AP33TFA?

Pros:

High Density: Offers large 128 Mb memory capacity for data storage and code execution.
High Speed: Provides fast read and program operations for efficient data access.
Reliable: SLC NAND technology ensures high reliability and endurance for critical data storage.
Wide Application Range: Suitable for various embedded systems requiring non-volatile memory solutions.
Parallel Interface: Parallel NOR flash memory allows easy integration into existing systems with parallel interfaces.

Cons:

Power Consumption: May consume more power compared to lower-density or lower-performance alternatives.
Complex Interface: Requires additional address and control lines for parallel memory interfacing.
Cost: Higher density NOR flash memory devices may have a higher cost compared to lower-density alternatives.

Are There Any Equivalents/Alternatives to PC28F00AP33TFA for Recommendation?

The S29GL01GS10TFI02 from Cypress Semiconductor is a similar NOR flash memory device with comparable features.
Alternatives to the PC28F00AP33TFA include the AT49BV1614A from Adesto Technologies and the AM29LV160DB-70EC from AMD.