NAND256W3A2BN6E

Name: NAND256W3A2BN6E Memory
Brand: Micron
SKU: NAND256W3A2BN6E
Rating: 4.5 (10 reviews)
Author: Lisleapex

NAND256W3A2BN6E is a reliable and efficient storage solution for various applications requiring fast data processing

6,857 有效庫存

NAND256W3A2BN6E

有效庫存6,857

NAND256W3A2BN6E is a reliable and efficient storage solution for various applications requiring fast data processing

製造商零件號 # : NAND256W3A2BN6E
包裝/封裝: TSOP-48
製造商: Micron
產品分類 : Memory
系列 : NAND256

品質保證

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NAND256W3A2BN6E 數據表

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NAND256W3A2BN6E 詳細說明

When it comes to reliable and high-performance storage solutions, the NAND256W3A2BN6E chip shines as a top contender in the NAND flash memory market. Its robust design, coupled with a capacious 256 gigabits (Gb) capacity, makes it a preferred choice for OEMs looking to enhance the storage capabilities of their products. The intricate alphanumeric code assigned to the chip signifies intricate details regarding its design, functionality, and manufacturing processes. As a key component in smartphones, tablets, and SSDs, the NAND256W3A2BN6E chip plays a crucial role in ensuring seamless data storage and retrieval, meeting the needs of today's consumer electronics landscape

主要特徵

HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
– Program/Erase locked during Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and hardware models
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	NAND Flash	RoHS	Details
Mounting Style	SMD/SMT	Package / Case	TSOP-48
Series	NAND256-A	Memory Size !	256 Mbit
Interface Type	Parallel	Organization	32 M x 8
Timing Type	Asynchronous	Data Bus Width	8 bit
Supply Voltage - Min	2.7 V	Supply Voltage - Max	3.6 V
Supply Current - Max	20 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature !	+ 85 C	Active Read Current - Max	20 mA
Architecture	Multiplane	Brand	STMicroelectronics
Memory Type !	NAND	Moisture Sensitive	Yes
Product	NAND Flash	Product Type !	NAND Flash
Speed	50 ns	Standard	Not Supported
Factory Pack Quantity	96	Subcategory	Memory & Data Storage

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 NAND256W3A2BN6E PDF 下載

常見問題解答

What is NAND256W3A2BN6E?

The NAND256W3A2BN6E is a 256 Mbit (32M x 8 bit / 16M x 16 bit) NAND flash memory device designed by Micron Technology. It is ideal for applications requiring non-volatile storage with high-density, such as solid-state drives, digital cameras, and embedded systems.

How Does NAND256W3A2BN6E Work?

The NAND256W3A2BN6E works by storing digital information in a non-volatile manner using NAND flash memory cells. It utilizes a multiplexed address/data bus and a command register to perform read, program, and erase operations. The device features a built-in error correction code (ECC) to ensure data integrity.

How Many Pins does NAND256W3A2BN6E have and What are the Functions of the Pinout Configuration?

The NAND256W3A2BN6E is housed in a 48-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:

IO0-IO7: I/O data bus for 8-bit or 16-bit operation.
ALE: Address latch enable for multiplexed address/data.
CLE: Command latch enable for command input.
CE: Chip enable for device selection.
WE: Write enable for write operations.
RE: Read enable for read operations.
R/B: Ready/busy output for status indication.
WP: Write protect for hardware data protection.
VCC, VSS: Power supply and ground pins.

What are the Pros and Cons of NAND256W3A2BN6E?

Pros:

High Density: Offers 256 Mbit of storage capacity for data-intensive applications.
Non-Volatile Storage: Retains data even when power is removed, suitable for storage applications.
Error Correction: Includes built-in ECC to ensure data integrity.
Fast Access Times: Provides fast read and program times for efficient data storage.
Industrial Temperature Range: Suitable for harsh environmental conditions in industrial applications.

Cons:

Complex Interface: Requires careful handling of address, command, and data signals for proper operation.
Endurance Limit: NAND flash memory has a limited number of program/erase cycles compared to other non-volatile memories.
Write Performance: Write operations may require additional time due to the nature of flash memory technology.

Are There Any Equivalents/Alternatives to NAND256W3A2BN6E for Recommendation?

The S34ML08G2 from Cypress Semiconductor is a similar 256 Mbit NAND flash memory device with additional features.
Alternatives to the NAND256W3A2BN6E include the MT29F256G08CJAAA from Micron Technology and the IS37SML01G1 from ISSI (Integrated Silicon Solution, Inc.).

列出的價格不含增值稅。

NAND256W3A2BN6E

有效庫存6,857

NAND256W3A2BN6E

NAND256W3A2BN6E

品質保證

運輸與付款

服務與包裝

價格 (USD)

快速報價

價格 (USD)

感興趣的部分

NAND256W3A2BN6E 詳細說明

主要特徵

規格

數據表 PDF

常見問題解答

What is NAND256W3A2BN6E?

How Does NAND256W3A2BN6E Work?

How Many Pins does NAND256W3A2BN6E have and What are the Functions of the Pinout Configuration?

What are the Pros and Cons of NAND256W3A2BN6E?

Are There Any Equivalents/Alternatives to NAND256W3A2BN6E for Recommendation?

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價格詳情