MT29F8G08ABACAH4-IT:C

Name: MT29F8G08ABACAH4-IT:C
Brand: Micron
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

8G-bit capacity: Provides ample storage space for large files

6,021 有效庫存

MT29F8G08ABACAH4-IT:C

有效庫存6,021

8G-bit capacity: Provides ample storage space for large files

製造商零件號 # : MT29F8G08ABACAH4-IT:C
包裝/封裝: VFBGA-63
零件狀態 : ACTIVE
製造商: Micron
產品分類 : Memory
系列 : MT29F8G08
RoHS:

品質保證

從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。此外，我們還保存這些檢查的詳細記錄，以確保整個供應鏈的透明度和可追溯性。

認證

我們已成功獲得各項認證標準，並建立了自己的專業檢測實驗室。這確保了我們向客戶提供的每件產品都符合最高的品質標準。我們遵守嚴格的測試協議，以保持我們產品的一致性和準確性。為了確保我們的產品是原裝正品，我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。

運輸與付款

關於運送

我們通常會在幾個工作日內通過可靠的運輸公司（例如 FedEx、SF、UPS 或 DHL）運送訂單。我們還支持其他運輸方式。如果您想詢問具體的運輸細節或費用，請隨時與我們聯繫。

關於付款

我們接受多種支付方式，包括VISA、MasterCard、銀聯、西聯、PayPal等渠道。

如果您有特定的付款方式或想詢問費率和其他詳細信息，請隨時與我們聯繫。

電匯

Paypal

信用卡

西聯匯款

速匯金

服務與包裝

About After Sales Service

All Parts Extended Quality Guarantee

自發貨之日起 90 天內發起申請。

與我們的工作人員確認退貨或換貨。

保持貨物收到時的原始狀態。

最後請注意，退貨或換貨的資格取決於對退貨商品實際狀況的評估。在完成退貨或換貨流程之前，我們將評估收到的貨物。如果您對退貨或換貨有任何疑問或需要進一步幫助，請隨時通過以下方式聯絡我們： [email protected]

關於包裝

在包裝方面，我們的產品均精心包裝在防靜電袋中，以提供ESD防靜電保護。外包裝堅固耐用且閉合牢固。我們支持各種包裝方法，例如捲帶式、切帶式、管式或託盤式。

例子

捲帶式

剪膠帶

管或託盤

MT29F8G08ABACAH4-IT:C 數據表

價格 (USD)

數量	單價	總價
1	$8.725	$8.72
10	$7.650	$76.50
30	$6.994	$209.82
100	$6.446	$644.60

這些價格會受到市場波動的影響，需要提交報價才能取得最新價格。

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快速報價

請提交詢價 MT29F8G08ABACAH4-IT:C 或發送電子郵件給我們： Email: [email protected], 我們將在 12 小時內與您聯繫。

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MT29F8G08ABACAH4-IT:C 詳細說明

Boasting fast erase and programming times, as well as low power consumption, the MT29F8G08ABACAH4-IT:C ensures reliable and energy-efficient performance in demanding applications. Advanced error correction and wear-leveling algorithms further enhance data integrity and longevity, making it a robust and dependable storage solution for critical data. Whether used in consumer electronics or industrial systems, this NAND flash memory chip delivers the performance and reliability essential for modern data storage needs

主要特徵

8Gb NAND Flash memory
Access time: 50ns
Organization: 512Mb x 64
Page Size: 2KB
Supply Voltage: 2.7V to 3.6V
Package: 63-ball BGA
Operating Temperature: -40°C to 85°C

應用

Automotive
Industrial
Networking
Communications
Consumer electronics
Medical devices
Gaming
Telecommunications
Enterprise storage
Security systems

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	NAND Flash	RoHS	Details
Mounting Style	SMD/SMT	Package / Case	VFBGA-63
Series	MT29F	Memory Size !	8 Gbit
Interface Type	Parallel	Organization	1 G x 8
Timing Type	Asynchronous	Data Bus Width	8 bit
Supply Voltage - Min	2.7 V	Supply Voltage - Max	3.6 V
Supply Current - Max	50 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature !	+ 85 C	Active Read Current - Max	50 mA
Brand	Micron	Moisture Sensitive	Yes
Product	NAND Flash	Product Type !	NAND Flash
Factory Pack Quantity	1260	Subcategory	Memory & Data Storage

常見問題解答

What is MT29F8G08ABACAH4-IT:C?

The MT29F8G08ABACAH4-IT:C is a 8Gb (1GB) NAND flash memory device manufactured by Micron Technology. It is designed for high-density data storage applications such as solid-state drives (SSDs), embedded systems, and industrial storage solutions.

How Does MT29F8G08ABACAH4-IT:C Work?

The MT29F8G08ABACAH4-IT:C works by storing data in a non-volatile manner, allowing it to retain information even when power is removed. It utilizes NAND flash memory technology, which consists of floating-gate transistors organized in a grid to store digital data. The memory can be accessed and programmed in a random-access fashion, making it suitable for various data storage requirements.

How Many Pins does MT29F8G08ABACAH4-IT:C have and What are the Functions of the Pinout Configuration?

The MT29F8G08ABACAH4-IT:C is housed in a 63-ball VFBGA (Very Fine Pitch Ball Grid Array) package. The pinout configuration includes:

IO[0:7]: I/O data pins for reading and writing data.
CE: Chip Enable pin for device selection.
WE: Write Enable pin for initiating write operations.
RE: Read Enable pin for initiating read operations.
RY/BY: Ready/Busy output pin indicating the status of the memory.
RP: Ready/Busy output pin indicating the status of the memory.
CLE: Command Latch Enable for command input.
ALE: Address Latch Enable for address input.
R/B: Ready/Busy output pin indicating the status of the memory.
VCC, VCCQ, VSS: Power and ground pins for the device.

What are the Pros and Cons of MT29F8G08ABACAH4-IT:C?

Pros:

High Density: Offers a large 8Gb capacity for data storage applications.
Non-Volatile: Retains data without power, suitable for mass storage solutions.
Fast Access: Provides fast access times for reading and writing data.
Industrial Grade: Designed for industrial temperature and reliability requirements.
Compact Package: The VFBGA package offers a space-efficient solution for high-density storage.

Cons:

Complex Interface: NAND flash memory devices may require complex interfaces and error correction mechanisms in some applications.
Write Endurance: Limited program/erase cycles compared to other non-volatile memory technologies.
Initialization Overhead: Initialization and block erase operations may require additional management in certain systems.

Are There Any Equivalents/Alternatives to MT29F8G08ABACAH4-IT:C for Recommendation?

Alternatives to the MT29F8G08ABACAH4-IT:C include the K9F2G08U0C from Samsung and the W25N01GV from Winbond, which are also 8Gb NAND flash memory devices suitable for similar applications.