MT28EW01GABA1HJS-0SIT

Name: MT28EW01GABA1HJS-0SIT
Brand: Micron
Rating: 4.5 (10 reviews)
Author: Lisleapex

MT28EW01GABA1HJS 0SIT Parallel NOR Flash

4,786 有效庫存

MT28EW01GABA1HJS-0SIT

有效庫存4,786

MT28EW01GABA1HJS 0SIT Parallel NOR Flash

製造商零件號 # : MT28EW01GABA1HJS-0SIT
包裝/封裝: TSOP-56
製造商: Micron
產品分類 : Memory
系列 : MT28EW01

品質保證

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例子

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MT28EW01GABA1HJS-0SIT 數據表

目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

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MT28EW01GABA1HJS-0SIT 詳細說明

Offering a robust combination of high capacity, energy efficiency, and rapid data transfer speeds, the MT28EW01GABA1HJS-0SIT NAND flash memory chip from Micron Technology is a top-of-the-line solution for demanding applications. With its impressive 128 gigabits (16 gigabytes) of storage capacity and 3.3V power supply requirement, this memory chip strikes an ideal balance between ample storage space and energy-saving operation. Its Toggle DDR2.0 interface enables lightning-fast data transfer rates, ensuring smooth performance across a variety of systems and controllers. Thanks to its compliance with the ONFI 4.1 interface specification, the MT28EW01GABA1HJS-0SIT can seamlessly integrate into a wide range of devices, from smartphones and tablets to solid-state drives (SSDs) and industrial equipment. The inclusion of SLC (Single-Level Cell) NAND technology guarantees exceptional reliability and endurance, making it a prime choice for applications with frequent data writes. To further bolster data integrity, the MT28EW01GABA1HJS-0SIT incorporates advanced error correction mechanisms, providing additional peace of mind in critical data storage environments

主要特徵

Increased storage capacity
Enhanced data integrity
Power-efficient operation
Wide operating temperature range

Improved system performance
Simplified system design
Faster time-to-market solutions

應用

Versatile for various applications
Suitable for embedded systems
Great for consumer electronics

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	NOR Flash	RoHS	Details
Mounting Style	SMD/SMT	Package / Case	TSOP-56
Series	MT28EW	Memory Size !	1 Gbit
Supply Voltage - Min	2.7 V	Supply Voltage - Max	3.6 V
Active Read Current - Max	50 mA	Interface Type	Parallel
Organization	128 M x 8/64 M x 16	Data Bus Width	8 bit/16 bit
Timing Type	Asynchronous	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature !	+ 85 C	Brand	Micron
Moisture Sensitive	Yes	Product Type !	NOR Flash
Speed	95 ns	Factory Pack Quantity	576
Subcategory	Memory & Data Storage	Unit Weight	0.218543 oz

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 MT28EW01GABA1HJS-0SIT PDF 下載

常見問題解答

What is MT28EW01GABA1HJS-0SIT?

The MT28EW01GABA1HJS-0SIT is a 1Gb (128MB) NAND flash memory device manufactured by Micron Technology. It is designed for use in various electronic devices such as smartphones, digital cameras, and embedded systems that require non-volatile storage for data and code storage.

How Does MT28EW01GABA1HJS-0SIT Work?

The MT28EW01GABA1HJS-0SIT operates by storing data in a grid of memory cells made of floating-gate transistors. To write data, charge is applied to the floating gate to modify its threshold voltage. Reading the data involves sensing the threshold voltage of the memory cell to determine the stored data. The device utilizes a complex controller to manage data programming, error correction, and wear leveling to ensure reliable operation.

How Many Pins does MT28EW01GABA1HJS-0SIT have and What are the Functions of the Pinout Configuration?

The MT28EW01GABA1HJS-0SIT is typically housed in a standard NAND flash memory package such as a TSOP (Thin Small Outline Package) or a BGA (Ball Grid Array) package. The pinout configuration includes:

VCC: Power supply pin for the device.
GND: Ground pin for the device.
CE: Chip Enable pin for device selection.
OE: Output Enable pin for controlling data output.
WE: Write Enable pin for initiating write operations.
RB: Ready/Busy pin for indicating the device status.
ALE: Address Latch Enable pin for latch and decode addresses.
CLE: Command Latch Enable pin for latching command inputs.
IO0-7: I/O pins for data input and output.

What are the Pros and Cons of MT28EW01GABA1HJS-0SIT?

Pros:

High Density: Offers a large storage capacity for data and code storage requirements.
Non-Volatile: Retains data even when power is turned off, suitable for long-term data storage.
Cost-Effective: Provides a cost-effective solution for storage in electronic devices.
Reliability: Includes error correction and wear leveling algorithms for reliable data storage.

Cons:

Read/Write Speed: NAND flash memory may have slower read and write speeds compared to other memory technologies.
Endurance: Limited program/erase cycles compared to other non-volatile memory technologies like NOR flash.
Complexity: Requires a memory controller to manage operations, adding complexity to system design.

Are There Any Equivalents/Alternatives to MT28EW01GABA1HJS-0SIT for Recommendation?

Alternative NAND flash memory devices to the MT28EW01GABA1HJS-0SIT include the K9GAG08U0E from Samsung and the H27UCG8T2BTR from SK Hynix.
For applications requiring non-volatile storage in electronic devices, alternative options such as eMMC (embedded MultiMediaCard) and UFS (Universal Flash Storage) may also be considered depending on the specific requirements of the application.