M29W400DT70N6E

Name: M29W400DT70N6E
Brand: Micron
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

Specifications of product M29W400DT70N6E, TSOP-48 NOR FLASH ROHS

6,463 有效庫存

M29W400DT70N6E

有效庫存6,463

Specifications of product M29W400DT70N6E, TSOP-48 NOR FLASH ROHS

製造商零件號 # : M29W400DT70N6E
包裝/封裝: TSOP-48
製造商: Numonyx
產品分類 : Memory
系列 : M29W400

品質保證

從我們的供應鍊網路採購的所有零件都經過嚴格的進貨檢驗流程。這種細緻的檢查可確保客戶收到的零件是正品並符合要求的標準。此外，我們還保存這些檢查的詳細記錄，以確保整個供應鏈的透明度和可追溯性。

認證

我們已成功獲得各項認證標準，並建立了自己的專業檢測實驗室。這確保了我們向客戶提供的每件產品都符合最高的品質標準。我們遵守嚴格的測試協議，以保持我們產品的一致性和準確性。為了確保我們的產品是原裝正品，我們還與信譽良好的第三方檢測機構合作進行嚴格的品質測試。我們對品質的承諾延伸到滿足行業、法律、監管和 ISO 9001:2015 的要求。

運輸與付款

關於運送

我們通常會在幾個工作日內通過可靠的運輸公司（例如 FedEx、SF、UPS 或 DHL）運送訂單。我們還支持其他運輸方式。如果您想詢問具體的運輸細節或費用，請隨時與我們聯繫。

關於付款

我們接受多種支付方式，包括VISA、MasterCard、銀聯、西聯、PayPal等渠道。

如果您有特定的付款方式或想詢問費率和其他詳細信息，請隨時與我們聯繫。

電匯

Paypal

信用卡

西聯匯款

速匯金

服務與包裝

About After Sales Service

All Parts Extended Quality Guarantee

自發貨之日起 90 天內發起申請。

與我們的工作人員確認退貨或換貨。

保持貨物收到時的原始狀態。

最後請注意，退貨或換貨的資格取決於對退貨商品實際狀況的評估。在完成退貨或換貨流程之前，我們將評估收到的貨物。如果您對退貨或換貨有任何疑問或需要進一步幫助，請隨時通過以下方式聯絡我們： [email protected]

關於包裝

在包裝方面，我們的產品均精心包裝在防靜電袋中，以提供ESD防靜電保護。外包裝堅固耐用且閉合牢固。我們支持各種包裝方法，例如捲帶式、切帶式、管式或託盤式。

例子

捲帶式

剪膠帶

管或託盤

M29W400DT70N6E 數據表

價格 (USD)

數量	單價	總價
1	$3.282	$3.28
192	$1.310	$251.52
480	$1.266	$607.68
960	$1.245	$1,195.20

這些價格會受到市場波動的影響，需要提交報價才能取得最新價格。

感興趣的部分

M25P80-VMP6G
Numonyx
Min$0.856

價格詳情
JS28F00AP30TFA
Micron
Min$13.759

價格詳情
MT28EW512ABA1HJS-0SIT
Micron
Min$7.401

價格詳情
MT47H128M8SH-25E IT:M
Micron
Min$2.804

價格詳情
PC28F256P30TFE
Micron
Min$4.132

價格詳情
PC28F256P33BFE
Micron
Min$6.291

價格詳情
N25Q128A11EF840E
Micron
Min$1.957

價格詳情
PC28F256P33TFE
Micron
Min$6.515

價格詳情

快速報價

請提交詢價 M29W400DT70N6E 或發送電子郵件給我們： Email: [email protected], 我們將在 12 小時內與您聯繫。

數量^*

聯絡人^*

郵箱^*

公司名稱

還要別的嗎？

M29W400DT70N6E 詳細說明

STMicroelectronics has a proven track record of producing high-quality semiconductor products, and the M29W400DT70N6E is no exception. With its compact size, low power consumption, and industry-leading performance, this flash memory chip is an essential tool for creating cutting-edge electronic devices that require fast and reliable data storage

主要特徵

4Mbit (512K x 8) CMOS Flash Memory
70ns access time
Low power consumption
Uniform Sector Architecture
Embedded Erase™ Algorithms
Byte/Word Mode Read and Write
Electronic signature
Top or bottom boot block configuration

應用

Industrial automation
Networking equipment
Telecommunications
Consumer electronics
Medical devices
Automotive systems
Gaming consoles
Embedded systems
Power management
Smart meters

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Product Category !	NOR Flash	RoHS	Details
Mounting Style	SMD/SMT	Package / Case	TSOP-48
Series	M29W	Memory Size !	4 Mbit
Supply Voltage - Min	2.7 V	Supply Voltage - Max	3.6 V
Active Read Current - Max	10 mA	Interface Type	Parallel
Organization	512 k x 8/256 k x 16	Data Bus Width	8 bit/16 bit
Timing Type	Asynchronous	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature !	+ 85 C	Architecture	Block Erase
Brand	STMicroelectronics	Memory Type !	NOR
Moisture Sensitive	Yes	Product Type !	NOR Flash
Speed	70 ns	Standard	Not Supported
Factory Pack Quantity	96	Subcategory	Memory & Data Storage

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 M29W400DT70N6E PDF 下載

常見問題解答

What is M29W400DT70N6E?

The M29W400DT70N6E is a 4-megabit (4M x 8-bit or 2M x 16-bit) non-volatile flash memory integrated circuit manufactured by STMicroelectronics. It is designed for use in a wide range of applications including automotive, industrial, and consumer electronics.

How Does M29W400DT70N6E Work?

The M29W400DT70N6E operates as a non-volatile memory storage device that retains data even when the power is turned off. It uses a floating gate architecture for data storage and can be electronically erased and reprogrammed. The flash memory is accessed using a parallel interface and can store program and configuration data for various microcontroller and digital systems.

How Many Pins does M29W400DT70N6E have and What are the Functions of the Pinout Configuration?

The M29W400DT70N6E is housed in a 48-ball TFBGA (Thin and Fine Ball Grid Array) package. The pinout configuration includes:

A0-A18: Address input pins for memory access.
DQ0-DQ7, DQ15-DQ8: Bidirectional data input/output pins.
CE#: Chip enable input for device selection.
WE#: Write enable input for program and erase operations.
OE#: Output enable input to enable data outputs.
Vcc, Vss: Power supply and ground pins, respectively.
RY/BY#: Ready/Busy output for indication of memory operation status.
RP#, RY/BY#: Hardware reset and Ready/Busy pins.

What are the Pros and Cons of M29W400DT70N6E?

Pros:

High Capacity: Offers 4-megabit storage capacity for program and data storage.
Non-Volatile: Retains data without power, suitable for program and configuration storage.
Fast Access Time: Provides fast read and program/erase times for efficient operation.
Compact Package: The TFBGA package is space-efficient, suitable for space-constrained designs.

Cons:

Complex Interface: Requires careful design considerations for the parallel interface and control signals.
Erase Limitations: Limited endurance for program/erase cycles compared to other non-volatile memories such as EEPROM.
Special Handling: BGA packages may require special handling and assembly techniques.

Are There Any Equivalents/Alternatives to M29W400DT70N6E for Recommendation?

An equivalent part to the M29W400DT70N6E is the S29GLS400R from Cypress Semiconductor.
Alternatives to the M29W400DT70N6E include the AM29F040B from AMD and the W29N04GVSIAA from Winbond.