K6X1008C2D-TF55

Name: K6X1008C2D-TF55
Brand: Samsung Electro-Mechanics
Rating: 4.5 (10 reviews)
Author: Lisleapex

55ns Static RAM

7,101 有效庫存

K6X1008C2D-TF55

有效庫存7,101

55ns Static RAM

製造商零件號 # : K6X1008C2D-TF55
包裝/封裝: 32-TSOP REVERSE
製造商: Samsung Electro-Mechanics
產品分類 : Memory

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關於包裝

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例子

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管或託盤

K6X1008C2D-TF55 數據表

目前的價格方案正在編制中。請聯絡我們的客戶服務團隊獲取最新的價格資訊。感謝您的理解和支援!

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K6X1008C2D-TF55 詳細說明

Housed in a compact 32-pin TSOP-II package, the K6X1008C2D-TF55 is designed for space-constrained applications without sacrificing performance. Its 128K x 8 organization ensures efficient memory storage, while its low power consumption makes it an ideal choice for embedded systems and computing devices. Whether you're designing the next generation of IoT devices or upgrading your existing infrastructure, this SDRAM module offers a cost-effective solution for all your memory needs

主要特徵

Fast and reliable memory solution
High-speed static RAM for industrial use
Low power consumption for energy efficiency
Organized as 128K words by 8 bits architecture
High-reliability CMOS static RAM module
5V operating voltage with fast access time

應用

Fast and reliable memory
Perfect for networking devices
High-speed performance

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Packaging !	Tray	Part Status !	Obsolete
Programmable	Not Verified	Memory Type !	Volatile
Memory Format	SRAM	Technology	SRAM - Asynchronous
Memory Size !	1Mbit	Memory Organization	128K x 8
Memory Interface !	Parallel	Write Cycle Time - Word, Page	55ns
Voltage - Supply	4.5V ~ 5.5V	Operating Temperature !	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Supplier Device Package	32-TSOP REVERSE

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 K6X1008C2D-TF55 PDF 下載

常見問題解答

What is K6X1008C2D-TF55?

The K6X1008C2D-TF55 is a static random access memory (SRAM) chip manufactured by Samsung Electronics. It is a 128K x 8-bit high-speed CMOS SRAM suitable for various applications requiring fast and non-volatile memory storage.

How Does K6X1008C2D-TF55 Work?

The K6X1008C2D-TF55 functions as a static random access memory device, enabling random access to any memory location. It stores data in a non-volatile manner, retaining information even when the power is turned off. The SRAM operates at high speeds, making it ideal for applications that require rapid data access.

How Many Pins does K6X1008C2D-TF55 have and What are the Functions of the Pinout Configuration?

The K6X1008C2D-TF55 is typically available in a 32-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:

VCC: Power supply pin.
GND: Ground pin.
BYTE: Byte control pin for data input/output selection.
OE: Output enable for controlling data output.
WE: Write enable for controlling data input.
CS: Chip select for device activation.
A0-A16: Address pins for memory location selection.
DQ0-DQ7: Data input/output pins.

What are the Pros and Cons of K6X1008C2D-TF55?

Pros:

High Speed: Offers fast access times for quick data retrieval.
Non-Volatile: Retains data even when power is removed.
Reliable: Provides stable and reliable data storage.
Low Power Consumption: Operates with low power consumption.
Easy Integration: Can be easily integrated into various electronic systems.

Cons:

Cost: High-speed SRAMs like the K6X1008C2D-TF55 may be more expensive than lower-speed alternatives.
Complexity: Requires proper interfacing and control signals for accurate data storage and retrieval.
Limited Storage: Limited memory capacity compared to other memory technologies like NAND flash or DRAM.

Are There Any Equivalents/Alternatives to K6X1008C2D-TF55 for Recommendation?

Similar SRAM options to the K6X1008C2D-TF55 include the CY62127EV30 from Cypress Semiconductor and the FM24C128-G from Ramtron International Corporation.
Alternative memory technologies like NOR flash or EEPROM may also be considered depending on the specific application requirements.