K6R4016V1D-UI10

Lead-free TSOP2-44 package
1,186 有效庫存

K6R4016V1D-UI10

有效庫存1,186

Lead-free TSOP2-44 package

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K6R4016V1D-UI10 數據表
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K6R4016V1D-UI10 詳細說明

GENERAL DESCRIPTIONThe K6R4016V1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control(UB, LB). The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP(II) forward or 48 TBGA.FEATURES• Fast Access Time 8,10ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) 1.2mA(Max.)L-Ver. only. Operating K6R4016V1D-08 : 80mA(Max.) K6R4016V1D-10 : 65mA(Max.)• Single 3.3 ±0.3V Power Supply• TTL Compatible Inputs and Outputs• Fully Static Operation- No Clock or Refresh required• Three State Outputs• 2V Minimum Data Retention: L-Ver. only.• Center Power/Ground Pin Configuration• Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16• Standard Pin Configuration K6R4016V1D-J : 44-SOJ-400 K6R4016V1D-T : 44-TSOP2-400BF K6R4016V1D-E : 48-TBGA with 0.75 Ball pitch (7mm X 9mm)• Operating in Commercial and Industrial Temperature range.

K6R4016V1D-UI10

主要特徵

  • Fast Access Time 8,10ns(Max.)
  • Low Power Dissipation
  • Standby (TTL) : 20mA(Max.)
  • (CMOS) : 5mA(Max.)
  • 1.2mA(Max.)L-Ver. only.
  • Operating K6R4016V1D-08 : 80mA(Max.)
  • K6R4016V1D-10 : 65mA(Max.)
  • Single 3.3 ±0.3V Power Supply
  • TTL Compatible Inputs and Outputs
  • Fully Static Operation
  • - No Clock or Refresh required
  • Three State Outputs
  • 2V Minimum Data Retention: L-Ver. only.
  • Center Power/Ground Pin Configuration
  • Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16
  • Standard Pin Configuration
  • K6R4016V1D-J : 44-SOJ-400
  • K6R4016V1D-T : 44-TSOP2-400BF
  • K6R4016V1D-E : 48-TBGA with 0.75 Ball pitch (7mm X 9mm)
  • Operating in Commercial and Industrial Temperature range.

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Manufacturer SAMSUNG Product Category ! IC Chips

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 K6R4016V1D-UI10 PDF 下載

常見問題解答

What is K6R4016V1D-UI10?

The K6R4016V1D-UI10 is a 4Mx16 bit dynamic random access memory (DRAM) integrated circuit produced by Samsung. It is commonly used in various electronic devices for storing temporary data that needs to be accessed quickly.

How Does K6R4016V1D-UI10 Work?

The K6R4016V1D-UI10 works by storing data in a memory cell that requires periodic refreshing to maintain the data. It uses a combination of row and column addresses to locate and access specific data stored in the memory array. The device operates at high speeds to provide fast access times for read and write operations.

How Many Pins does K6R4016V1D-UI10 have and What are the Functions of the Pinout Configuration?

The K6R4016V1D-UI10 is typically housed in a 44-pin TSOP (Thin Small Outline Package) configuration. The pinout configuration includes:

  • VDD, VSS: Power supply and ground pins, respectively.
  • Address Pins: Used for specifying the row and column addresses for data access.
  • Data Pins: Input/output pins for transferring data to and from the memory array.
  • Control Pins: Includes pins for chip enable, write enable, output enable, and clock signals.

What are the Pros and Cons of K6R4016V1D-UI10?

Pros:

  • High Density: Offers a large memory capacity in a compact package.
  • Fast Access Time: Operates at high speeds for quick data access.
  • Reliable: Provides stable performance for data storage applications.
  • Industry Standard: Produced by a reputable manufacturer, ensuring quality and compatibility.

Cons:

  • Power Consumption: DRAMs can consume more power compared to non-volatile memory types.
  • Refresh Requirement: Requires periodic refreshing to maintain stored data.
  • Volatility: Data is lost when power is removed, necessitating backup measures for critical data.

Are There Any Equivalents/Alternatives to K6R4016V1D-UI10 for Recommendation?

Some equivalents or alternatives to the K6R4016V1D-UI10 include:

  • MT48LC4M16A2 from Micron Technology
  • HYB514256B from Infineon Technologies
  • IS41LV16100 from Integrated Silicon Solution, Inc. (ISSI)

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