K6R4016V1D-TC10

A PDSO44-packaged CMOS static RAM
5,925 有效庫存

K6R4016V1D-TC10

有效庫存5,925

A PDSO44-packaged CMOS static RAM

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K6R4016V1D-TC10 數據表
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K6R4016V1D-TC10 詳細說明

With its combination of capacity and speed, the K6R4016V1D-TC10 is a standout option for anyone in need of reliable memory storage. Whether you're working on a complex project or simply want to boost the performance of your computer, this chip is designed to meet your needs. Its 16-megabit capacity ensures that you'll have plenty of space for all your data, while its 10 nanosecond speed ensures that you won't be left waiting for your information to load

主要特徵

  • This SDRAM module is suitable for use in servers, desktops, and workstations.
  • The K6R40 module provides fast clock speeds and high bandwidth capabilities.
  • It features a compact design with low power consumption.
  • This product has a capacity of 16 megabytes with efficient data access.
  • The K6R40 module is designed for use in a wide range of applications.
  • It requires a supply voltage of 3.3V with high reliability.

應用

  • Great for I/O applications
  • No bus contention
  • Efficient read/write cycles

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Manufacturer Samsung Product Category ! IC Chips

數據表 PDF

數據表記錄了器件的特性、絕對最大額定值、應用等，這對於作為器件特定應用的整體指南大有裨益。

初步規格 K6R4016V1D-TC10 PDF 下載

常見問題解答

What is K6R4016V1D-TC10?

The K6R4016V1D-TC10 is a 4M x 16Bit high-speed static random-access memory (SRAM) designed by Samsung. It is ideal for applications requiring fast and reliable data storage and access, such as networking equipment, telecommunications, and high-performance computing systems.

How Does K6R4016V1D-TC10 Work?

The K6R4016V1D-TC10 works by storing and retrieving digital data in a high-speed, non-volatile memory array. It operates with fast access times and low standby current, making it suitable for high-performance applications that require frequent data access and retention.

How Many Pins does K6R4016V1D-TC10 have and What are the Functions of the Pinout Configuration?

The K6R4016V1D-TC10 is housed in a 48-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:

  • VCC: Power supply pin.
  • GND: Ground pin.
  • Address Inputs (A0-A13): Input pins for selecting memory locations.
  • Data Inputs/Outputs (DQ0-DQ15): Bi-directional data pins for input and output.
  • Write Enable (WE), Output Enable (OE), Chip Enable (CE1, CE2): Control pins for write, read, and chip enable operations.
  • Byte Data Inputs/Outputs (BYTE): Byte control pins for multiplexed address and data operations.
  • Input Clock (CLK): Input clock signal for synchronous operation.
  • Output Clock (CLK): Output clock signal for synchronous operation.

What are the Pros and Cons of K6R4016V1D-TC10?

Pros:

  • High Speed: Offers fast access times for rapid data retrieval and storage.
  • Low Standby Current: Maintains low power consumption during standby mode, suitable for power-sensitive applications.
  • High Density: Provides a large storage capacity in a compact package, optimizing board space.
  • Reliable: Delivers reliable data retention and access for continuous operation.
  • Wide Temperature Range: Supports operation over a wide temperature range, suitable for industrial and automotive applications.

Cons:

  • Complex Interface: Requires careful control of write, read, and enable signals for proper operation.
  • Higher Cost: High-speed, high-density SRAM may have a higher cost compared to lower-speed alternatives.
  • External Interface Logic: May require additional interface logic for seamless integration into the system.

Are There Any Equivalents/Alternatives to K6R4016V1D-TC10 for Recommendation?

  • The CY62157EV30 from Cypress Semiconductor is a similar high-speed, low-power SRAM with comparable features.
  • Alternatives to the K6R4016V1D-TC10 include the AS6C4008 from Alliance Memory and the M68AR024 from STMicroelectronics.

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