K4H511638J-LCCC

Integrated Circuit
5,752 有效庫存

K4H511638J-LCCC

有效庫存5,752

Integrated Circuit

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運輸與付款

運輸與付款

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西聯匯款

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服務與包裝

服務與包裝

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例子

捲帶式

捲帶式

剪膠帶

剪膠帶

管或託盤

管或託盤

K4H511638J-LCCC 數據表
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K4H511638J-LCCC 詳細說明

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) • All inputs except data & DM are sampled at the positive going edge of the system clock(CK) • Data I/O transactions on both edges of data strobe • Edge aligned data output, center aligned data input • LDM,UDM for write masking only (x16) • DM for write masking only (x4, x8) • Auto & Self refresh • 7.8us refresh interval(8K/64ms refresh) • Maximum burst refresh cycle : 8 • 66pin TSOP II Pb-Free package • RoHS compliant

K4H511638J-LCCC

主要特徵

  • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
  • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • DLL aligns DQ and DQS transition with CK transition
  • MRS cycle with address key programs
  • -. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
  • -. Burst length (2, 4, 8)
  • -. Burst type (sequential & interleave)
  • All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
  • Data I/O transactions on both edges of data strobe
  • Edge aligned data output, center aligned data input
  • LDM,UDM for write masking only (x16)
  • DM for write masking only (x4, x8)
  • Auto & Self refresh
  • 7.8us refresh interval(8K/64ms refresh)
  • Maximum burst refresh cycle : 8
  • 66pin TSOP II Pb-Free package
  • RoHS compliant

規格

以下是所選零件的基本參數，涉及零件的特性及其所屬類別。

Manufacturer samsung Product Category ! IC Chips

常見問題解答

What is K4H511638J-LCCC?

The K4H511638J-LCCC is a high-speed CMOS dynamic random access memory (DRAM) chip manufactured by Samsung. It is commonly used in various electronic devices such as computers, servers, and networking equipment for storing and retrieving data.

How Does K4H511638J-LCCC Work?

The K4H511638J-LCCC operates as a volatile memory device that stores data in a digital format. When data needs to be read or written, the DRAM chip accesses specific memory locations through row and column addresses. It utilizes a combination of capacitors and transistors to store and refresh data dynamically.

How Many Pins does K4H511638J-LCCC have and What are the Functions of the Pinout Configuration?

The K4H511638J-LCCC is typically available in a 54-pin LCCC (Leadless Chip Carrier) package. The pinout configuration includes:

  • DQ0-DQ15: Data input/output pins.
  • A0-A12: Address input pins for row and column addressing.
  • WE: Write enable pin.
  • RAS, CAS: Row address strobe and column address strobe pins.
  • CLK, CKE: Clock input and clock enable pins.
  • CS: Chip select pin.
  • VDD, VSS: Power supply and ground pins.
  • DM0-DM7: Data mask pins.

What are the Pros and Cons of K4H511638J-LCCC?

Pros:

  • High-Speed Operation: Offers fast data access and transfer rates.
  • High Density: Provides large storage capacity in a compact form factor.
  • Cost-Effective: DRAM technology is generally more cost-effective compared to other memory types.
  • Compatibility: Widely compatible with various memory controllers and systems.

Cons:

  • Volatility: Data stored in DRAM is volatile and requires constant refreshing to maintain integrity.
  • Power Consumption: DRAM chips consume more power compared to non-volatile memory types.
  • Latency: DRAM may have higher access latency compared to SRAM or cache memory.

Are There Any Equivalents/Alternatives to K4H511638J-LCCC for Recommendation?

  • Equivalent parts to the K4H511638J-LCCC include the MT48LC16M16A2 from Micron Technology and the CY7C1061AV33 from Cypress.
  • Alternative DRAM chips to consider are the H5TC2G63FFR from SK Hynix and the IS42S16320B from Integrated Silicon Solution, Inc. (ISSI).

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