恭喜您提交成功
提交失敗
SMD 相關產品
| 零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|
| JANSR2N7587U3 | This high-gain UHF transistor offers excellent frequency response and stability in RF amplifier designs | Infineon Technologies | 3~7 Days | 4,878 | ||
| IRF5NJ9540 | Hermetically Sealed P-Channel Silicon Metal-oxide Semiconductor FET capable of 18A I(D) at 100V, 0.117ohm, SMD0.5, 3 PIN | Infineon Technologies | NRND | 3~7 Days | 5,829 | |
| HFB20HJ20C | 0A high current diode with 20ns fast recovery time in small SMD form factor | Infineon Technologies | NRND | 3~7 Days | 7,664 | |
| 30LJQ100 | High-Reliability Schottky Diode, 30 Amperes, 100 Volts, SMD-0.5 Package | Infineon Technologies | ACTIVE | 3~7 Days | 8,260 | |
| JANS1N6843CCU3 | Military-spec diode | Infineon Technologies | NRND | 3~7 Days | 9,714 | |
| JANSR2N7546U3 | High-Reliability HEXFET RHD Qualified Parts List | Infineon Technologies AG | ACTIVE | 3~7 Days | 8,994 | |
| IRHLNJ797034 | IRHLNJ797034: A single-channel, P-channel MOSFET housed in SMD-0 | Infineon Technologies AG | ACTIVE | 3~7 Days | 7,902 | |
| IRHLNJ77034 | SMD transistor suited for use in compact and densely populated circuit board designs | Infineon Technologies | NRND | 3~7 Days | 9,197 | |
| 30CLJQ100 | Silicon, HERMETIC SEALED, CERAMIC | Infineon Technologies AG | ACTIVE | 3~7 Days | 7,488 | |
| 15LJQ100 | Hermetic Sealed Surface-Mount Device (SMD): Featuring a hermetically sealed casing and SMD-0.5 package with 3 pins for surface mounting | Infineon Technologies AG | ACTIVE | 3~7 Days | 6,230 | |
| IRHNJ67130 | Suitable for high radiation environments | Infineon Technologies | NRND | 3~7 Days | 7,085 | |
| JANSR2N7485U3 | 3-pin N-channel MOSFET capable of handling 130V and 20A | Infineon Technologies | NRND | 3~7 Days | 8,325 | |
| JANSR2N7481U3 | N-Channel Transistor MOSFET 100V 22A 3-Pin SMD-0.5 | Infineon Technologies | NRND | 3~7 Days | 8,657 | |
| JANSR2N7480U3 | N-Channel MOSFET with a Voltage Rating of 60V and a Current Handling Capability of 22A in Surface Mount Device (SMD) Package | Infineon Technologies | NRND | 3~7 Days | 6,829 | |
| JANSR2N7479U3 | Small-signal N-channel MOSFET with a 30V drain-source voltage, 22A continuous drain current, and surface-mount design | Infineon Technologies | NRND | 3~7 Days | 8,518 | |
| IRL5NJ7404 | oxide Semiconductor FET, 1-Element | Infineon Technologies | NRND | 3~7 Days | 7,810 | |
| IRL5NJ024 | channel 55V surface mount hexfet power mosfet | Infineon Technologies | NRND | 3~7 Days | 9,685 | |
| IRHNJ57Z30 | 30V 22A N-channel SMD-0.5 Trans MOSFET | Infineon Technologies | NRND | 3~7 Days | 5,517 | |
| IRF5NJ540 | Surface Mount Power Mosfet: Single N-Channel Hexfet, 100V, 75W, 104nC | Infineon Technologies | NRND | 3~7 Days | 5,590 | |
| IRF5NJ5305 | Suitable for a variety of electronic applications | Infineon Technologies | NRND | 3~7 Days | 6,753 | |
| HFB25HJ20 | SMD-0.5 Silicon Rectifier Diode, HERMETIC SEALED, 25A, 200V V(RRM), 1 Phase, 1 Element, 3 PIN | Infineon Technologies AG | ACTIVE | 3~7 Days | 5,026 | |
| 30CLJQ150 | Silicon Rectifier Diode with Schottky Configuration | Infineon Technologies AG | ACTIVE | 3~7 Days | 5,275 | |
| 30SLJQ060 | Ceramic 3 Pin 30A Diode | Infineon Technologies AG | ACTIVE | 3~7 Days | 5,629 | |
| 30SCLJQ045 | 3-Pin SMD-0.5 45V 30A Schottky Rectifier Diode | Infineon Technologies AG | ACTIVE | 3~7 Days | 9,774 |
附加包裝/箱