恭喜您提交成功
提交失敗
165-TBGA 相關產品
| 零件號 | 描述 | 製造商 | 生命週期狀態 | 貨物週期 | 有存貨 | 操作 |
|---|---|---|---|---|---|---|
| 71V3577S80BQI | SRAM 4M 3.3V I/O PBSRAM SLOW X | Renesas Electronics Corporation | ACTIVE | 3~7 Days | 5,551 | |
| 71V3577S75BQG | 5 Nanoseconds (ns) | Renesas Electronics Corporation | ACTIVE | 3~7 Days | 6,675 | |
| 71V35761SA166BQGI | PipeLined Burst SRAM with Synchronous Operation, 3.3V I/O, and 128K x 36 Capacity | Renesas Electronics Corporation | ACTIVE | 3~7 Days | 6,815 | |
| MT58L512L18FF-10IT | Low latency and high-speed storage for demanding applications | Micron Technology Inc. | 3~7 Days | 7,043 | ||
| IDT71V65802S150BQ | Advanced ZBT SDRAM solution for demanding applications requiring rapid storage access | Renesas Electronics Corporation | 3~7 Days | 2,220 | ||
| IS64LF25636A-7.5B3LA3 | SRAM 9Mb,Flowthrough,Sync,256K x 36,166Mhz,3.3v I/O,165 Ball BGA, RoHS, Automotive temp | ISSI | 3~7 Days | 6,782 | ||
| IDT71V35761YSA183BQI | Low-latency memory module ideal for real-time data processing and analytics | Renesas Electronics Corporation | 3~7 Days | 6,061 | ||
| IDT71V67602S166BQGI | Ultra-fast SRAM memory solution for demanding applications | Renesas Electronics Corporation | 3~7 Days | 6,516 | ||
| IDT71V35761SA200BQ | Low latency and high bandwidth make it suitable for computing systems | Renesas Electronics Corporation | 3~7 Days | 2,644 | ||
| IDT71V35761S183BQI | A high-performance SRAM memory IC for demanding applications | Renesas Electronics Corporation | 3~7 Days | 2,471 | ||
| IDT71V67602S150BQI | High-speed SRAM for fast parallel processi | Renesas Electronics Corporation | 3~7 Days | 4,533 | ||
| IDT71V35761YSA166BQI | Low-latency s access time SRAM solution for demanding system | Renesas Electronics Corporation | 3~7 Days | 4,772 | ||
| IDT71V3577SA85BQ | Boost system speed and efficiency with this fast parallel SRAM chi | Renesas Electronics Corporation | 3~7 Days | 3,924 | ||
| IDT71V35761SA166BQ | Fast clock speed of MHz supports high-performance system | Renesas Electronics Corporation | 3~7 Days | 2,107 | ||
| IDT71P72604S200BQG | High-speed SRAM solution for demanding applications, offering fast access and low latenc | Renesas Electronics Corporation | 3~7 Days | 5,327 | ||
| IDT71P74604S250BQ | Advanced synchronous memory solution for high-performance embedded systems and computing need | Renesas Electronics Corporation | 3~7 Days | 5,875 | ||
| IDT71V67602S166BQI8 | Fast and reliable bit SDRAM for high-speed computin | Renesas Electronics Corporation | 3~7 Days | 5,066 | ||
| IDT71V67602S166BQ8 | Fast and efficient synchronous SRAM with low power consumptio | Renesas Electronics Corporation | 3~7 Days | 2,646 | ||
| IDT71V3577SA80BQG | Synchronous RAM module for high-speed data transfe | Renesas Electronics Corporation | 3~7 Days | 3,298 | ||
| IDT71V35761YSA200BQ8 | Fast and reliable SDRAM chip for 200 MHz operations | Renesas Electronics Corporation | 3~7 Days | 6,589 | ||
| IDT71V35761YSA166BQ8 | Parallel interface ensures rapid data transfe | Renesas Electronics Corporation | 3~7 Days | 6,405 | ||
| IDT71V35761S200BQG8 | High-performance SRAM memory chip for demanding application | Renesas Electronics Corporation | 3~7 Days | 7,260 | ||
| IDT71V35761S183BQ8 | Fast SRAM for high-speed applications | Renesas Electronics Corporation | 3~7 Days | 3,225 | ||
| IDT71V25761YSA183BQ8 | High-performance SRAM for fast data processing and transfe | Renesas Electronics Corporation | 3~7 Days | 3,008 | ||
| IDT71V25761SA200BQ8 | Compact 165-CABGA package ideal for space-constrained designs | Renesas Electronics Corporation | 3~7 Days | 2,118 | ||
| MT58L128L32P1F-10 | High-performance cache memory for fast data processi | Micron Technology Inc. | 3~7 Days | 4,281 | ||
| MT57W1MH18JF-6 | High-speed memory module for data-intensive applicatio | Micron Technology Inc. | 3~7 Days | 4,448 | ||
| MT57W1MH18BF-4 | Miniaturized SRAM chip, optimized for space-sensitive applications and eco-friendly productio | Micron Technology Inc. | 3~7 Days | 6,091 | ||
| MT55V512V32PF-10 | Reliably stores up to MB of data in a small footprin | Micron Technology Inc. | 3~7 Days | 2,570 | ||
| MT55L256L32PF-10 | Advanced memory solution for high-performance computing applications | Micron Technology Inc. | 3~7 Days | 3,436 | ||
| IDT71V3577SA75BQ8 | Advanced SRAM IC for low-latency data storage need | Renesas Electronics Corporation | 3~7 Days | 6,108 | ||
| 71V3556SA133BQ | SRAM 4M X36 3.3V I/O SLOW ZBT | Renesas Electronics | ACTIVE | 3~7 Days | 9,868 | |
| 71V3556SA166BQG | Slow ZBT 4M x 36 SRAM with 3.3V I/O | Renesas Electronics | ACTIVE | 3~7 Days | 5,159 | |
| 71V3557S75BQ | High-performance memory solution for demanding applications and environments | Renesas Electronics Corporation | 3~7 Days | 5,944 | ||
| 71V3559S80BQ | SRAM 256K X 18 3.3V I/O ZBT FT | Renesas Electronics | ACTIVE | 3~7 Days | 8,015 | |
| 71V3559S80BQI | SRAM 256K X 18 3.3V I/O ZBT FT | Renesas Electronics | ACTIVE | 3~7 Days | 8,090 | |
| 71V3559S85BQG | SRAM 4M ZBT 3.3V I/O SLOW X18 | Renesas Electronics | ACTIVE | 3~7 Days | 9,194 | |
| 71V65603S100BQGI | SRAM 9M ZBT SLOW X36 P/L 3.3V | Renesas Electronics | ACTIVE | 3~7 Days | 7,733 | |
| 71V65603S133BQG | SRAM 9M ZBT SLOW X36 P/L 3.3V | Renesas Electronics | ACTIVE | 3~7 Days | 7,383 | |
| 71V65703S85BQI | SRAM 9M ZBT SLOW X36 F/T 3.3V | Renesas Electronics | ACTIVE | 3~7 Days | 8,805 |
附加包裝/箱